Self-Heating Effects in SOI Devices and GaN HEMTs
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منابع مشابه
Reliability Concerns due to Self-Heating Effects in GaN HEMTs
Nitride semiconductors have emerged as a strong candidate for high power, high temperature and high frequency applications in the recent years [13]. The motivation for using this material system is clearly illustrated in Figure 1 below. It is important to emphasize that the strongest feature of the III-V materials is the heterostructure technology it can support quantum well, modulation-doped h...
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.......................................................................................................................................... 5 KURZZUSAMMENFASSUNG ........................................................................................................... 6 INTRODUCTION.....................................................................................................................
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تاریخ انتشار 2012